NCE70T680K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70T680K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.76 Ohm

Encapsulados: TO-252

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NCE70T680K datasheet

 ..1. Size:491K  ncepower
 nce70t680i nce70t680k.pdf pdf_icon

NCE70T680K

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:491K  ncepower
 nce70t680k.pdf pdf_icon

NCE70T680K

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:491K  ncepower
 nce70t680i.pdf pdf_icon

NCE70T680K

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.2. Size:610K  ncepower
 nce70t680 nce70t680f.pdf pdf_icon

NCE70T680K

NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

MOSTRAR MÁS

Otros transistores... NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, NCE70T540D, NCE70T540F, NCE70T680I, IRF3710, NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC