NCE70T680K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE70T680K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 28 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.76 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCE70T680K
NCE70T680K Datasheet (PDF)
nce70t680i nce70t680k.pdf
NCE70T680INCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t680k.pdf
NCE70T680INCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t680i.pdf
NCE70T680INCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t680 nce70t680f.pdf
NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t680.pdf
NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t680d nce70t680 nce70t680f.pdf
NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t680f.pdf
NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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