NCE8295AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE8295AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 95 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 268 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN5X6-8L

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NCE8295AG datasheet

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NCE8295AG

http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R

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NCE8295AG

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nce8295ai.pdf pdf_icon

NCE8295AG

Pb Free Product http //www.ncepower.com NCE8295AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =82V,I =95A DS D R

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nce8295a.pdf pdf_icon

NCE8295AG

Pb Free Product http //www.ncepower.com NCE8295A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

Otros transistores... NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, NCE8290, NCE8290B, AON7408, NCE8295AI, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T