NCE8295AG Specs and Replacement
Type Designator: NCE8295AG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 268 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN5X6-8L
NCE8295AG substitution
- MOSFET ⓘ Cross-Reference Search
NCE8295AG datasheet
nce8295ag.pdf
http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R ... See More ⇒
nce8295ai.pdf
Pb Free Product http //www.ncepower.com NCE8295AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =82V,I =95A DS D R ... See More ⇒
nce8295a.pdf
Pb Free Product http //www.ncepower.com NCE8295A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, NCE8290, NCE8290B, AON7408, NCE8295AI, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T
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