NCE82H140LL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE82H140LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 140 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 445 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TOLL

 Búsqueda de reemplazo de NCE82H140LL MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE82H140LL datasheet

 ..1. Size:381K  ncepower
 nce82h140ll.pdf pdf_icon

NCE82H140LL

NCE82H140LL http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 5.1. Size:627K  ncepower
 nce82h140.pdf pdf_icon

NCE82H140LL

http //www.ncepower.com NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 82V,I =140A DS D R

 5.2. Size:364K  ncepower
 nce82h140d.pdf pdf_icon

NCE82H140LL

http //www.ncepower.com NCE82H140D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)

 7.1. Size:369K  ncepower
 nce82h110d.pdf pdf_icon

NCE82H140LL

Pb Free Product http //www.ncepower.com NCE82H110D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE75H25, NCE75H25T, NCE75H35TC, NCE8290, NCE8290B, NCE8295AG, NCE8295AI, NCE82H140, 2N7002, NCE82H160, NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T, NCE8736, NCE9435A, NCEA0130AG