NCE82H140LL Datasheet and Replacement
Type Designator: NCE82H140LL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 445 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TOLL
NCE82H140LL substitution
NCE82H140LL Datasheet (PDF)
nce82h140ll.pdf

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce82h140.pdf

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR
nce82h140d.pdf

http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)
nce82h110d.pdf

Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
Datasheet: NCE75H25 , NCE75H25T , NCE75H35TC , NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , K4145 , NCE82H160 , NCE82H160D , NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG .
History: FDN336P
Keywords - NCE82H140LL MOSFET datasheet
NCE82H140LL cross reference
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History: FDN336P



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