NCE82H160D Todos los transistores

 

NCE82H160D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE82H160D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 285 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 537 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de NCE82H160D MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE82H160D Datasheet (PDF)

 ..1. Size:304K  ncepower
nce82h160d.pdf pdf_icon

NCE82H160D

NCE82H160Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

 5.1. Size:318K  ncepower
nce82h160.pdf pdf_icon

NCE82H160D

http://www.ncepower.com NCE82H160NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)

 7.1. Size:627K  ncepower
nce82h140.pdf pdf_icon

NCE82H160D

http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR

 7.2. Size:381K  ncepower
nce82h140ll.pdf pdf_icon

NCE82H160D

NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

Otros transistores... NCE75H35TC , NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , IRF4905 , NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K .

History: ELM321604A | SI7682DP | GP2M002A060XG | CS7807 | SSF11NS70UF

 

 
Back to Top

 


 
.