NCE82H160D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE82H160D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 285 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 201 nC
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 537 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET NCE82H160D
NCE82H160D Datasheet (PDF)
nce82h160d.pdf
NCE82H160Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)
nce82h160.pdf
http://www.ncepower.com NCE82H160NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =160A RDS(ON)
nce82h140.pdf
http://www.ncepower.comNCE82H140NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE82H140 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 82V,I =140ADS DR
nce82h140ll.pdf
NCE82H140LLhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE82H140LL uses advanced trench technology and VDS = 82V,ID =140A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)
nce82h110d.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h110.pdf
Pb Free Producthttp://www.ncepower.com NCE82H110NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H110 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)
nce82h140d.pdf
http://www.ncepower.com NCE82H140DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =140A RDS(ON)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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