NCE85H25 Todos los transistores

 

NCE85H25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE85H25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 250 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 863 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

NCE85H25 Datasheet (PDF)

 ..1. Size:297K  ncepower
 nce85h25.pdf pdf_icon

NCE85H25

http://www.ncepower.com NCE85H25NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 0.1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H25

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 7.2. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HX2300 | ATM2N65TE | BUK9Y58-75B | LSF60R240HT | 2SK2071-01L | KHB7D5N60F2 | 2SK3272-01L

 

 
Back to Top

 


 
.