Справочник MOSFET. NCE85H25

 

NCE85H25 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE85H25
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 250 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 863 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCE85H25

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE85H25 Datasheet (PDF)

 ..1. Size:297K  ncepower
 nce85h25.pdf pdf_icon

NCE85H25

http://www.ncepower.com NCE85H25NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 0.1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H25

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 7.2. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , NCE82H160D , NCE85H21TC , AO3400 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , NCEA15P30K , NCEA2301 .

History: LNTR4003NLT1G | SSM6P15FU | STD100N03LT4 | IXTK120N25P | STW75N60M6 | HGP059N08A | SWN7N65K2

 

 
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