NCE85H25. Аналоги и основные параметры

Наименование производителя: NCE85H25

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 350 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 250 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 66 ns

Cossⓘ - Выходная емкость: 863 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCE85H25

- подборⓘ MOSFET транзистора по параметрам

 

NCE85H25 даташит

 ..1. Size:297K  ncepower
 nce85h25.pdf pdf_icon

NCE85H25

http //www.ncepower.com NCE85H25 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 0.1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H25

http //www.ncepower.com NCE85H25T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H25

Pb Free Product http //www.ncepower.com NCE85H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Note5 Schematic diagram RDS(ON)

 7.2. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H25

Pb Free Product http //www.ncepower.com NCE85H21C NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE8290B, NCE8295AG, NCE8295AI, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC, AO3401, NCE85H25T, NCE8736, NCE9435A, NCEA0130AG, NCEA01P13K, NCEA02P20K, NCEA15P30K, NCEA2301