Справочник MOSFET. NCE85H25

 

NCE85H25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE85H25
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 250 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 863 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NCE85H25

 

 

NCE85H25 Datasheet (PDF)

 ..1. Size:297K  ncepower
 nce85h25.pdf

NCE85H25 NCE85H25

http://www.ncepower.com NCE85H25NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 0.1. Size:382K  ncepower
 nce85h25t.pdf

NCE85H25 NCE85H25

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.1. Size:305K  ncepower
 nce85h21.pdf

NCE85H25 NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 7.2. Size:322K  ncepower
 nce85h21c.pdf

NCE85H25 NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 7.3. Size:285K  ncepower
 nce85h21tc.pdf

NCE85H25 NCE85H25

Pb Free Producthttp://www.ncepower.com NCE85H21TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

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