NCEA6058K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEA6058K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 181 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de NCEA6058K MOSFET
NCEA6058K Datasheet (PDF)
ncea6058k.pdf

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http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR
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Otros transistores... NCEA01P13K , NCEA02P20K , NCEA15P30K , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , IRLZ44N , NCEA6080K , NCEA60ND08S , NCEA60ND18G , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , NCEA85H25 , NCEAP0135AK .
History: IRF4104SPBF
History: IRF4104SPBF



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