NCEAP025N60AG Todos los transistores

 

NCEAP025N60AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEAP025N60AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 175 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 99.5 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCEAP025N60AG Datasheet (PDF)

 ..1. Size:436K  ncepower
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NCEAP025N60AG

http://www.ncepower.com NCEAP025N60AGNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m

 7.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

NCEAP025N60AG

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 7.2. Size:542K  ncepower
 nceap020n85ll.pdf pdf_icon

NCEAP025N60AG

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 7.3. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP025N60AG

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

MOSTRAR MÁS

Otros transistores... NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , NCEAP020N10LL , NCEAP020N85LL , NCEAP023N10LL , CS150N03A8 , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG , NCEAP15T14 , NCEAP15T14D , NCEAP16N85AK .

History: RJK1575DPA | LSD55R140GT | OSG65R2K4PF | SI8800EDB

 

 
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