NCEAP025N60AG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEAP025N60AG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 175 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 900 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEAP025N60AG
NCEAP025N60AG Datasheet (PDF)
nceap025n60ag.pdf

http://www.ncepower.com NCEAP025N60AGNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m
nceap020n10ll.pdf

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
nceap020n85ll.pdf

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga
nceap023n10ll.pdf

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM
Другие MOSFET... NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , NCEAP020N10LL , NCEAP020N85LL , NCEAP023N10LL , CS150N03A8 , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG , NCEAP15T14 , NCEAP15T14D , NCEAP16N85AK .
History: 2SK3337N | RJK1008DPP-E0 | IRFS624A | PK5G6EA | PE848DU | BSC035N04LSG
History: 2SK3337N | RJK1008DPP-E0 | IRFS624A | PK5G6EA | PE848DU | BSC035N04LSG



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