NCEAP15ND10AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP15ND10AG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 67 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 46 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 42 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
Paquete / Cubierta: PDFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEAP15ND10AG
NCEAP15ND10AG Datasheet (PDF)
nceap15nd10ag.pdf
http://www.ncepower.com NCEAP15ND10AGNCE N-Channel Super Trench II Power MOSFET (Primary)DescriptionGeneral FeaturesThe NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46ADS Dis uniquely optimized to provide the most efficient highR =13.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =16.5m (typical) @ V =4.5VDS(ON
nceap15t14.pdf
http://www.ncepower.com NCEAP15T14NCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
nceap15t14d.pdf
http://www.ncepower.com NCEAP15T14DNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
nceap16n85ak.pdf
http://www.ncepower.comNCEAP16N85AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP16N85AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: WMO07N65C4
