NCEAP15ND10AG - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEAP15ND10AG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 67 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEAP15ND10AG
NCEAP15ND10AG Datasheet (PDF)
nceap15nd10ag.pdf
http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON
nceap15t14.pdf
http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R
nceap15t14d.pdf
http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
nceap16n85ak.pdf
http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
Другие MOSFET... NCEAP020N10LL , NCEAP020N85LL , NCEAP023N10LL , NCEAP025N60AG , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , 8N60 , NCEAP15T14 , NCEAP15T14D , NCEAP16N85AK , NCEAP25N10AD , NCEAP25N10AG , NCEAP25N10AK , NCEAP30T17GU , NCEAP4040Q .
History: PSMN2R2-40YSD
History: PSMN2R2-40YSD
Список транзисторов
Обновления
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