NCEAP15ND10AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEAP15ND10AG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 67 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 46 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 180 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEAP15ND10AG
NCEAP15ND10AG Datasheet (PDF)
nceap15nd10ag.pdf
http://www.ncepower.com NCEAP15ND10AGNCE N-Channel Super Trench II Power MOSFET (Primary)DescriptionGeneral FeaturesThe NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46ADS Dis uniquely optimized to provide the most efficient highR =13.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =16.5m (typical) @ V =4.5VDS(ON
nceap15t14.pdf
http://www.ncepower.com NCEAP15T14NCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
nceap15t14d.pdf
http://www.ncepower.com NCEAP15T14DNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
nceap16n85ak.pdf
http://www.ncepower.comNCEAP16N85AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP16N85AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw
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