NCEAP15T14D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP15T14D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 320 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36 nS
Cossⓘ - Capacitancia de salida: 690 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de NCEAP15T14D MOSFET
- Selecciónⓘ de transistores por parámetros
NCEAP15T14D datasheet
nceap15t14d.pdf
http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
nceap15t14.pdf
http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R
nceap15nd10ag.pdf
http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON
nceap16n85ak.pdf
http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
Otros transistores... NCEAP023N10LL, NCEAP025N60AG, NCEAP026N10T, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, 75N75, NCEAP16N85AK, NCEAP25N10AD, NCEAP25N10AG, NCEAP25N10AK, NCEAP30T17GU, NCEAP4040Q, NCEAP4045AGU, NCEAP4045GU
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