NCEAP15T14D Specs and Replacement
Type Designator: NCEAP15T14D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO263
NCEAP15T14D substitution
- MOSFET ⓘ Cross-Reference Search
NCEAP15T14D datasheet
nceap15t14d.pdf
http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x ... See More ⇒
nceap15t14.pdf
http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R... See More ⇒
nceap15nd10ag.pdf
http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON... See More ⇒
nceap16n85ak.pdf
http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒
Detailed specifications: NCEAP023N10LL, NCEAP025N60AG, NCEAP026N10T, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, 75N75, NCEAP16N85AK, NCEAP25N10AD, NCEAP25N10AG, NCEAP25N10AK, NCEAP30T17GU, NCEAP4040Q, NCEAP4045AGU, NCEAP4045GU
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