NCEAP40ND40AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP40ND40AG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 375 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0101 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de NCEAP40ND40AG MOSFET
NCEAP40ND40AG Datasheet (PDF)
nceap40nd40ag.pdf

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg
nceap40nd40g.pdf

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi
nceap40nd80ag.pdf

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p
nceap40nd80g.pdf

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(
Otros transistores... NCEAP25N10AG , NCEAP25N10AK , NCEAP30T17GU , NCEAP4040Q , NCEAP4045AGU , NCEAP4045GU , NCEAP4065QU , NCEAP4090AGU , 8N60 , NCEAP40ND40G , NCEAP40ND60AG , NCEAP40ND80AG , NCEAP40ND80G , NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K .
History: AO3415A | 2SK2162 | VBA1310S
History: AO3415A | 2SK2162 | VBA1310S



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