NCEAP40ND40AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEAP40ND40AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.8 nS

Cossⓘ - Capacitancia de salida: 375 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0101 Ohm

Encapsulados: DFN5X6-8L

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NCEAP40ND40AG datasheet

 ..1. Size:721K  ncepower
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NCEAP40ND40AG

NCEAP40ND40AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43A DS D uniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charg

 3.1. Size:693K  ncepower
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NCEAP40ND40AG

http //www.ncepower.com NCEAP40ND40G NCE Automotive N-Channel Super Trench Power MOSFET General Features Description V =40V,I =43A DS D The NCEAP40ND40G uses Super Trench technology that is R =8.2m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =10.4m (typical) @ V =4.5V DS(ON) GS switching performance. Both conduction and swi

 5.1. Size:643K  ncepower
nceap40nd80ag.pdf pdf_icon

NCEAP40ND40AG

NCEAP40ND80AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R p

 5.2. Size:676K  ncepower
nceap40nd80g.pdf pdf_icon

NCEAP40ND40AG

http //www.ncepower.com NCEAP40ND80G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80G uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5V DS(

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