Справочник MOSFET. NCEAP40ND40AG

 

NCEAP40ND40AG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEAP40ND40AG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 2.8 ns
   Cossⓘ - Выходная емкость: 375 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0101 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEAP40ND40AG

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEAP40ND40AG Datasheet (PDF)

 ..1. Size:721K  ncepower
 nceap40nd40ag.pdf pdf_icon

NCEAP40ND40AG

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

 3.1. Size:693K  ncepower
 nceap40nd40g.pdf pdf_icon

NCEAP40ND40AG

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

 5.1. Size:643K  ncepower
 nceap40nd80ag.pdf pdf_icon

NCEAP40ND40AG

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

 5.2. Size:676K  ncepower
 nceap40nd80g.pdf pdf_icon

NCEAP40ND40AG

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

ПОКАЗАТЬ ЕЩЁ

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History: PJX8802

 

 
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