NCEAP40ND80G Todos los transistores

 

NCEAP40ND80G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEAP40ND80G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEAP40ND80G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEAP40ND80G Datasheet (PDF)

 ..1. Size:676K  ncepower
 nceap40nd80g.pdf pdf_icon

NCEAP40ND80G

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

 3.1. Size:643K  ncepower
 nceap40nd80ag.pdf pdf_icon

NCEAP40ND80G

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

 5.1. Size:693K  ncepower
 nceap40nd40g.pdf pdf_icon

NCEAP40ND80G

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

 5.2. Size:721K  ncepower
 nceap40nd40ag.pdf pdf_icon

NCEAP40ND80G

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

MOSTRAR MÁS

Otros transistores... NCEAP4045AGU , NCEAP4045GU , NCEAP4065QU , NCEAP4090AGU , NCEAP40ND40AG , NCEAP40ND40G , NCEAP40ND60AG , NCEAP40ND80AG , MMD60R360PRH , NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D , NCEAP40PT15G , NCEAP40T11AG .

History: HM3421B | 12N65H | 11NM70L-T2S-T | 2SK3686-01 | TN2404K | STW37N60DM2AG | STT468A

 

 
Back to Top

 


 
.