All MOSFET. NCEAP40ND80G Datasheet

 

NCEAP40ND80G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP40ND80G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34.8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6-8L

 NCEAP40ND80G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP40ND80G Datasheet (PDF)

 ..1. Size:676K  ncepower
 nceap40nd80g.pdf

NCEAP40ND80G NCEAP40ND80G

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

 3.1. Size:643K  ncepower
 nceap40nd80ag.pdf

NCEAP40ND80G NCEAP40ND80G

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

 5.1. Size:693K  ncepower
 nceap40nd40g.pdf

NCEAP40ND80G NCEAP40ND80G

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

 5.2. Size:721K  ncepower
 nceap40nd40ag.pdf

NCEAP40ND80G NCEAP40ND80G

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

 5.3. Size:727K  ncepower
 nceap40nd60ag.pdf

NCEAP40ND80G NCEAP40ND80G

NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSF3341 | PMZB290UNE2

 

 
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