NCEAP60ND60G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEAP60ND60G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 345 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: DFN5X6-8L

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NCEAP60ND60G datasheet

 ..1. Size:644K  ncepower
 nceap60nd60g.pdf pdf_icon

NCEAP60ND60G

NCEAP60ND60G http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND60G uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 5.1. Size:389K  ncepower
 nceap60nd30ag.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP60ND30AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =15m (typical) @ V =4.5V DS

 7.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

 7.2. Size:759K  ncepower
 nceap6055agu.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

MOSTRAR MÁS

Otros transistores... NCEAP40T20ALL, NCEAP40T35ALL, NCEAP40T35AVD, NCEAP6035AG, NCEAP6050AQU, NCEAP6055AGU, NCEAP6090AGU, NCEAP60ND30AG, IRFB4115, NCEAP60T12AD, NCEAP60T12AK, NCEAP60T15G, NCEAP60T20D, NCEB301G, NCEB301Q, NCEP008N30GU, NCEP008NH40AGU