NCEAP60ND60G. Аналоги и основные параметры

Наименование производителя: NCEAP60ND60G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 84 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2 ns

Cossⓘ - Выходная емкость: 345 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEAP60ND60G

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP60ND60G даташит

 ..1. Size:644K  ncepower
 nceap60nd60g.pdf pdf_icon

NCEAP60ND60G

NCEAP60ND60G http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND60G uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 5.1. Size:389K  ncepower
 nceap60nd30ag.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP60ND30AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =15m (typical) @ V =4.5V DS

 7.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

 7.2. Size:759K  ncepower
 nceap6055agu.pdf pdf_icon

NCEAP60ND60G

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

ПОКАЗАТЬ ЕЩЁ

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