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NCEAP60T15G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEAP60T15G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 240 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 965 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCEAP60T15G Datasheet (PDF)

 ..1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

NCEAP60T15G

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

 5.1. Size:754K  ncepower
 nceap60t12ak.pdf pdf_icon

NCEAP60T15G

NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 5.2. Size:675K  ncepower
 nceap60t12ad.pdf pdf_icon

NCEAP60T15G

NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 6.1. Size:723K  ncepower
 nceap60t20d.pdf pdf_icon

NCEAP60T15G

http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c

MOSTRAR MÁS

Otros transistores... NCEAP6035AG , NCEAP6050AQU , NCEAP6055AGU , NCEAP6090AGU , NCEAP60ND30AG , NCEAP60ND60G , NCEAP60T12AD , NCEAP60T12AK , 2SK3878 , NCEAP60T20D , NCEB301G , NCEB301Q , NCEP008N30GU , NCEP008NH40AGU , NCEP008NH40GU , NCEP0107AR , NCEP0107R .

History: BUK7109-75ATE | 2SK2849S | BLF7G27LS-75P

 

 
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