NCEB301G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEB301G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DFN5X6-8L

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NCEB301G datasheet

 ..1. Size:474K  ncepower
 nceb301g.pdf pdf_icon

NCEB301G

Pb Free Product http //www.ncepower.com NCEB301G 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo

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 nceb301q.pdf pdf_icon

NCEB301G

http //www.ncepower.com NCEB301Q 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301Q is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3X3 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Schematic Dia

Otros transistores... NCEAP6055AGU, NCEAP6090AGU, NCEAP60ND30AG, NCEAP60ND60G, NCEAP60T12AD, NCEAP60T12AK, NCEAP60T15G, NCEAP60T20D, IRFP250N, NCEB301Q, NCEP008N30GU, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS