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NCEB301G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEB301G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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NCEB301G Datasheet (PDF)

 ..1. Size:474K  ncepower
 nceb301g.pdf pdf_icon

NCEB301G

Pb Free Producthttp://www.ncepower.com NCEB301G30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo

 7.1. Size:814K  ncepower
 nceb301q.pdf pdf_icon

NCEB301G

http://www.ncepower.com NCEB301Q30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEB301Q is designed to provide a high efficiencysynchronous buck power stage with optimal layout andboard space utilization. It includes two specialized MOSFETsin a dual Power DFN3X3 package. The Q1 "High Side"MOSFET is desgined to minimze switching losses. The Schematic Dia

Otros transistores... NCEAP6055AGU , NCEAP6090AGU , NCEAP60ND30AG , NCEAP60ND60G , NCEAP60T12AD , NCEAP60T12AK , NCEAP60T15G , NCEAP60T20D , AON7408 , NCEB301Q , NCEP008N30GU , NCEP008NH40AGU , NCEP008NH40GU , NCEP0107AR , NCEP0107R , NCEP0109AR , NCEP0116AS .

History: 2SK3783 | 2N60L-TA3-T | STU458S | DMN2005LPK | NMSD200B01-7 | AO6608

 

 
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