NCEB301G Specs and Replacement

Type Designator: NCEB301G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFN5X6-8L

NCEB301G substitution

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NCEB301G datasheet

 ..1. Size:474K  ncepower
 nceb301g.pdf pdf_icon

NCEB301G

Pb Free Product http //www.ncepower.com NCEB301G 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo... See More ⇒

 7.1. Size:814K  ncepower
 nceb301q.pdf pdf_icon

NCEB301G

http //www.ncepower.com NCEB301Q 30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301Q is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3X3 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Schematic Dia... See More ⇒

Detailed specifications: NCEAP6055AGU, NCEAP6090AGU, NCEAP60ND30AG, NCEAP60ND60G, NCEAP60T12AD, NCEAP60T12AK, NCEAP60T15G, NCEAP60T20D, IRFP250N, NCEB301Q, NCEP008N30GU, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS

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