All MOSFET. NCEB301G Datasheet

 

NCEB301G Datasheet and Replacement


   Type Designator: NCEB301G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.5 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN5X6-8L
 

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NCEB301G Datasheet (PDF)

 ..1. Size:474K  ncepower
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NCEB301G

Pb Free Producthttp://www.ncepower.com NCEB301G30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo

 7.1. Size:814K  ncepower
 nceb301q.pdf pdf_icon

NCEB301G

http://www.ncepower.com NCEB301Q30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEB301Q is designed to provide a high efficiencysynchronous buck power stage with optimal layout andboard space utilization. It includes two specialized MOSFETsin a dual Power DFN3X3 package. The Q1 "High Side"MOSFET is desgined to minimze switching losses. The Schematic Dia

Datasheet: NCEAP6055AGU , NCEAP6090AGU , NCEAP60ND30AG , NCEAP60ND60G , NCEAP60T12AD , NCEAP60T12AK , NCEAP60T15G , NCEAP60T20D , AON7408 , NCEB301Q , NCEP008N30GU , NCEP008NH40AGU , NCEP008NH40GU , NCEP0107AR , NCEP0107R , NCEP0109AR , NCEP0116AS .

History: BUK7105-40AIE | JCS2N70MFH | AP9465GEM | AP9466GH | UPA2793GR

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