NCEP0160AG Todos los transistores

 

NCEP0160AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP0160AG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 354 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: DFN5X6-8L

 Búsqueda de reemplazo de MOSFET NCEP0160AG

 

Principales características: NCEP0160AG

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NCEP0160AG

http //www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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NCEP0160AG

Pb Free Product http //www.ncepower.com NCEP0160A NCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

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NCEP0160AG

http //www.ncepower.com NCEP0160 NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

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NCEP0160AG

http //www.ncepower.com NCEP0160G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

MOSTRAR MÁS

Otros transistores... NCEP011NH25QU , NCEP012N85LL , NCEP0135AF , NCEP0140AL , NCEP0155AG , NCEP015N30GU , NCEP015N60LL , NCEP0160 , AON7410 , NCEP0160G , NCEP016N10LL , NCEP016N60VD , NCEP016N85LL , NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F .

History: JMH65R070PCFD

 

 
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