Справочник MOSFET. NCEP0160AG

 

NCEP0160AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0160AG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 105 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 18 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 65 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 354 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEP0160AG

 

 

NCEP0160AG Datasheet (PDF)

 ..1. Size:390K  ncepower
 ncep0160ag.pdf

NCEP0160AG NCEP0160AG

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 5.1. Size:428K  ncepower
 ncep0160a.pdf

NCEP0160AG NCEP0160AG

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 6.1. Size:432K  ncepower
 ncep0160.pdf

NCEP0160AG NCEP0160AG

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 6.2. Size:333K  ncepower
 ncep0160g.pdf

NCEP0160AG NCEP0160AG

http://www.ncepower.com NCEP0160GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

 6.3. Size:449K  ncepower
 ncep0160f.pdf

NCEP0160AG NCEP0160AG

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

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