NCEP0178 Todos los transistores

 

NCEP0178 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP0178
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 48 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO-220

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NCEP0178 Datasheet (PDF)

 ..1. Size:350K  ncepower
ncep0178.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 0.1. Size:316K  ncepower
ncep0178d.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178DNCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.2. Size:318K  ncepower
ncep0178f.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178FNCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.3. Size:445K  ncepower
ncep0178ak.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.4. Size:354K  ncepower
ncep0178al.pdf

NCEP0178
NCEP0178

http://www.ncepower.com NCEP0178ALNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 0.5. Size:356K  ncepower
ncep0178af.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.6. Size:368K  ncepower
ncep0178a.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178ANCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

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History: STW78N65M5 | STY60NM60

 

 
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History: STW78N65M5 | STY60NM60

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