Справочник MOSFET. NCEP0178

 

NCEP0178 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0178
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 78 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 48 nC
   Время нарастания (tr): 45 ns
   Выходная емкость (Cd): 600 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0085 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NCEP0178

 

 

NCEP0178 Datasheet (PDF)

 ..1. Size:350K  ncepower
ncep0178.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 0.1. Size:316K  ncepower
ncep0178d.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178DNCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.2. Size:318K  ncepower
ncep0178f.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178FNCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.3. Size:445K  ncepower
ncep0178ak.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178AKNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.4. Size:354K  ncepower
ncep0178al.pdf

NCEP0178
NCEP0178

http://www.ncepower.com NCEP0178ALNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 0.5. Size:356K  ncepower
ncep0178af.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178AFNCE N-Channel Super Trench Power MOSFET Description The NCEP0178AF uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.6. Size:368K  ncepower
ncep0178a.pdf

NCEP0178
NCEP0178

Pb Free Producthttp://www.ncepower.com NCEP0178ANCE N-Channel Super Trench Power MOSFET Description The NCEP0178A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

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