NCEP0178 datasheet, аналоги, основные параметры
Наименование производителя: NCEP0178
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 600 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP0178
- подборⓘ MOSFET транзистора по параметрам
NCEP0178 даташит
ncep0178.pdf
Pb Free Product http //www.ncepower.com NCEP0178 NCE N-Channel Super Trench Power MOSFET Description The NCEP0178 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep0178d.pdf
Pb Free Product http //www.ncepower.com NCEP0178D NCE N-Channel Super Trench Power MOSFET Description The NCEP0178D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep0178f.pdf
Pb Free Product http //www.ncepower.com NCEP0178F NCE N-Channel Super Trench Power MOSFET Description The NCEP0178F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep0178ak.pdf
Pb Free Product http //www.ncepower.com NCEP0178AK NCE N-Channel Super Trench Power MOSFET Description The NCEP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
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