NCEP018N60D Todos los transistores

 

NCEP018N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP018N60D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 255 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 141 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 1647 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO-263
 

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NCEP018N60D Datasheet (PDF)

 ..1. Size:686K  ncepower
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NCEP018N60D

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 ..2. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf pdf_icon

NCEP018N60D

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 4.1. Size:1129K  ncepower
 ncep018n60agu.pdf pdf_icon

NCEP018N60D

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

 4.2. Size:1124K  ncepower
 ncep018n60gu.pdf pdf_icon

NCEP018N60D

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

MOSTRAR MÁS

Otros transistores... NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F , NCEP018N10LL , NCEP018N30GU , NCEP018N60 , NCEP018N60AGU , P60NF06 , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , NCEP01P35AG , NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG .

 

 
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