All MOSFET. NCEP018N60D Datasheet

 

NCEP018N60D Datasheet and Replacement


   Type Designator: NCEP018N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1647 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-263
 

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NCEP018N60D Datasheet (PDF)

 ..1. Size:686K  ncepower
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NCEP018N60D

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 ..2. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf pdf_icon

NCEP018N60D

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 4.1. Size:1129K  ncepower
 ncep018n60agu.pdf pdf_icon

NCEP018N60D

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

 4.2. Size:1124K  ncepower
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NCEP018N60D

NCEP018N60GUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60GU uses Super Trench II technology that is V =60V,I =195ADS Duniquely optimized to provide the most efficient high frequency R =1.5 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

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Datasheet: NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F , NCEP018N10LL , NCEP018N30GU , NCEP018N60 , NCEP018N60AGU , P60NF06 , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , NCEP01P35AG , NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG .

History: IXTM6N90

Keywords - NCEP018N60D MOSFET datasheet

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