NCEP01P35AG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01P35AG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 260 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de NCEP01P35AG MOSFET
NCEP01P35AG Datasheet (PDF)
ncep01p35ag.pdf

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l
ncep01p35a.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-
ncep01p35ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P35AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep01p60g.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to
Otros transistores... NCEP018N30GU , NCEP018N60 , NCEP018N60AGU , NCEP018N60D , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , 5N65 , NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG , NCEP01P60G , NCEP01T10G , NCEP01T11D , NCEP01T12D , NCEP01T13B .
History: GSM3366W | SI4324DY | APM7322K | AP9402GYT-HF | 2SK2834N | PPM6N12V10 | MCMN2012
History: GSM3366W | SI4324DY | APM7322K | AP9402GYT-HF | 2SK2834N | PPM6N12V10 | MCMN2012



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