NCEP01P35AG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP01P35AG
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP01P35AG
NCEP01P35AG Datasheet (PDF)
ncep01p35ag.pdf

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l
ncep01p35a.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-
ncep01p35ak.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P35AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep01p60g.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to
Другие MOSFET... NCEP018N30GU , NCEP018N60 , NCEP018N60AGU , NCEP018N60D , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , 5N65 , NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG , NCEP01P60G , NCEP01T10G , NCEP01T11D , NCEP01T12D , NCEP01T13B .
History: AP9466GJ | AP18T10AGK-HF | SDF4N100JAA | BUK625R2-30C | AP9477GK-HF | MDS3753EURH | 2SK3009B
History: AP9466GJ | AP18T10AGK-HF | SDF4N100JAA | BUK625R2-30C | AP9477GK-HF | MDS3753EURH | 2SK3009B



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