NCEP01T13BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP01T13BD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 135 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 92 nS
Cossⓘ - Capacitancia de salida: 840 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO-263
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NCEP01T13BD Datasheet (PDF)
ncep01t13bd.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13b.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13BNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13ad.pdf

Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Otros transistores... NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG , NCEP01P60G , NCEP01T10G , NCEP01T11D , NCEP01T12D , NCEP01T13B , IRFB31N20D , NCEP01T13LL , NCEP01T18D , NCEP01T18VD , NCEP01T25LL , NCEP01T25T , NCEP01T30T , NCEP020N10LL , NCEP020N30BQU .
History: BLF7G27LS-75P | SI4463CDY | 2SK3916-01 | PMZB950UPE
History: BLF7G27LS-75P | SI4463CDY | 2SK3916-01 | PMZB950UPE



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