NCEP01T13BD - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP01T13BD
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 135 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 92 ns
Cossⓘ - Выходная емкость: 840 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEP01T13BD
NCEP01T13BD Datasheet (PDF)
ncep01t13bd.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13b.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13BNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep01t13.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep01t13ad.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP01P35AK , NCEP01P40AGU , NCEP01P60AG , NCEP01P60G , NCEP01T10G , NCEP01T11D , NCEP01T12D , NCEP01T13B , IRF2807 , NCEP01T13LL , NCEP01T18D , NCEP01T18VD , NCEP01T25LL , NCEP01T25T , NCEP01T30T , NCEP020N10LL , NCEP020N30BQU .
History: JFPC10N65CI | SFF240-28 | SSF1526 | JFPC7N90C | MP88N25C
History: JFPC10N65CI | SFF240-28 | SSF1526 | JFPC7N90C | MP88N25C
Список транзисторов
Обновления
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