NCEP01T25T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP01T25T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 250 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm

Encapsulados: TO-247

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NCEP01T25T datasheet

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NCEP01T25T

http //www.ncepower.com NCEP01T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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NCEP01T25T

http //www.ncepower.com NCEP01T25LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l

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NCEP01T25T

Pb Free Product http //www.ncepower.com NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP01T25T

Pb Free Product http //www.ncepower.com NCEP01T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

MOSTRAR MÁS

Otros transistores... NCEP01T11D, NCEP01T12D, NCEP01T13B, NCEP01T13BD, NCEP01T13LL, NCEP01T18D, NCEP01T18VD, NCEP01T25LL, P60NF06, NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, NCEP020N30QU, NCEP020N60AGU, NCEP020N60GU, NCEP020N85, NCEP020N85D