All MOSFET. NCEP01T25T Datasheet

 

NCEP01T25T Datasheet and Replacement


   Type Designator: NCEP01T25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 250 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-247
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NCEP01T25T Datasheet (PDF)

 ..1. Size:406K  ncepower
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NCEP01T25T

http://www.ncepower.com NCEP01T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 5.1. Size:346K  ncepower
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NCEP01T25T

http://www.ncepower.com NCEP01T25LLNCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l

 7.1. Size:348K  ncepower
ncep01t13.pdf pdf_icon

NCEP01T25T

Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 7.2. Size:283K  ncepower
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NCEP01T25T

Pb Free Producthttp://www.ncepower.com NCEP01T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AO4405E | SL2343 | NCEP0160 | MTS3572G6 | BUK9Y15-100E | IPF060N03L | BSZ100N06NS

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