NCEP020N60GU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP020N60GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 205 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00215 Ohm

Encapsulados: DFN5X6-8L

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NCEP020N60GU datasheet

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NCEP020N60GU

http //www.ncepower.com NCEP020N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP020N60GU uses Super Trench II technology that is V =60V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product

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NCEP020N60GU

NCEP020N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =180A DS D The NCEP020N60AGU uses Super Trench II technology that R =1.8 m (typical) @ V =10V DS(ON) GS is uniquely optimized to provide the most efficient high R =2.5 m (typical) @ V =4.5V DS(ON) GS frequency switching performance. Both conduction and

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NCEP020N60GU

NCEP020N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =330A DS D switching performance. Both conduction and switching power R =1.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

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NCEP020N60GU

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP01T18VD, NCEP01T25LL, NCEP01T25T, NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, NCEP020N30QU, NCEP020N60AGU, 7N60, NCEP020N85, NCEP020N85D, NCEP020N85LL, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G, NCEP0218K