NCEP020N60GU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP020N60GU
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 205 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00215 Ohm
Тип корпуса: DFN5X6-8L
- подбор MOSFET транзистора по параметрам
NCEP020N60GU Datasheet (PDF)
ncep020n60gu.pdf

http://www.ncepower.com NCEP020N60GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP020N60GU uses Super Trench II technology that is V =60V,I =180ADS Duniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product
ncep020n60agu.pdf

NCEP020N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =180ADS DThe NCEP020N60AGU uses Super Trench II technology thatR =1.8 m (typical) @ V =10VDS(ON) GSis uniquely optimized to provide the most efficient highR =2.5 m (typical) @ V =4.5VDS(ON) GSfrequency switching performance. Both conduction and
ncep020n10ll.pdf

NCEP020N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =330ADS Dswitching performance. Both conduction and switching power R =1.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep020n85d.pdf

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STD20NF06 | NVMFS5C628N | KP778A | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT
History: STD20NF06 | NVMFS5C628N | KP778A | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT



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