NCEP020N85LL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP020N85LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 295 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 1850 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TOLL

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NCEP020N85LL datasheet

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NCEP020N85LL

http //www.ncepower.com NCEP020N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =295A DS D switching performance. Both conduction and switching power R =1.6m , typical @ V =10V DS(ON) GS losses are minimized due to a

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NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:410K  ncepower
 ncep020n85.pdf pdf_icon

NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.3. Size:410K  ncepower
 ncep020n85 ncep020n85d.pdf pdf_icon

NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, NCEP020N30QU, NCEP020N60AGU, NCEP020N60GU, NCEP020N85, NCEP020N85D, IRF830, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G, NCEP0218K, NCEP0220F, NCEP0225F, NCEP0225G