NCEP020N85LL Datasheet. Specs and Replacement

Type Designator: NCEP020N85LL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 295 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 1850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TOLL

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NCEP020N85LL datasheet

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NCEP020N85LL

http //www.ncepower.com NCEP020N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =295A DS D switching performance. Both conduction and switching power R =1.6m , typical @ V =10V DS(ON) GS losses are minimized due to a... See More ⇒

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NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.2. Size:410K  ncepower
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NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.3. Size:410K  ncepower
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NCEP020N85LL

NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

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Detailed specifications: NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, NCEP020N30QU, NCEP020N60AGU, NCEP020N60GU, NCEP020N85, NCEP020N85D, IRF830, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G, NCEP0218K, NCEP0220F, NCEP0225F, NCEP0225G

Keywords - NCEP020N85LL MOSFET specs

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