NCEP025N30G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP025N30G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 95 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 40.5 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: DFN5X6-8L

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NCEP025N30G Datasheet (PDF)

..1. Size:807K ncepower
ncep025n30g.pdf

http://www.ncepower.com NCEP025N30GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =85ADS Duniquely optimized to provide the most efficient high frequencyR =2.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.8m (typical) @ V =4.5V

6.1. Size:953K ncepower
ncep025n85ll.pdf

Pb Free ProductNCEP025N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =260ADS Duniquely optimized to provide the most efficient high frequencyR =2.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

6.2. Size:1320K ncepower
ncep025n60.pdf

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

6.3. Size:748K ncepower
ncep025n60ag.pdf

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

6.4. Size:1320K ncepower
ncep025n60 ncep025n60d.pdf

6.5. Size:333K ncepower
ncep025n60g.pdf

http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

6.6. Size:410K ncepower
ncep025n12ll.pdf

NCEP025N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina

6.7. Size:1320K ncepower
ncep025n60d.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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