NCEP025N30G datasheet, подбор замены

 ..1. Size:807K  ncepower
 ncep025n30g.pdf 

http //www.ncepower.com NCEP025N30G NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =85A DS D uniquely optimized to provide the most efficient high frequency R =2.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =4.5V

 6.1. Size:953K  ncepower
 ncep025n85ll.pdf 

Pb Free Product NCEP025N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =260A DS D uniquely optimized to provide the most efficient high frequency R =2.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product

 6.2. Size:1320K  ncepower
 ncep025n60.pdf 

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 6.3. Size:748K  ncepower
 ncep025n60ag.pdf 

http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)

 6.4. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf 

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 6.5. Size:333K  ncepower
 ncep025n60g.pdf 

http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 6.6. Size:410K  ncepower
 ncep025n12ll.pdf 

NCEP025N12LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina

 6.7. Size:1320K  ncepower
 ncep025n60d.pdf 

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely