Справочник MOSFET. NCEP025N30G

 

NCEP025N30G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP025N30G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 40.5 nC
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 1700 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP025N30G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP025N30G Datasheet (PDF)

 ..1. Size:807K  ncepower
 ncep025n30g.pdf pdf_icon

NCEP025N30G

http://www.ncepower.com NCEP025N30GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =85ADS Duniquely optimized to provide the most efficient high frequencyR =2.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.8m (typical) @ V =4.5V

 6.1. Size:953K  ncepower
 ncep025n85ll.pdf pdf_icon

NCEP025N30G

Pb Free ProductNCEP025N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =260ADS Duniquely optimized to provide the most efficient high frequencyR =2.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

 6.2. Size:1320K  ncepower
 ncep025n60.pdf pdf_icon

NCEP025N30G

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 6.3. Size:748K  ncepower
 ncep025n60ag.pdf pdf_icon

NCEP025N30G

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP02525K , NCEP02580D , NCEP02590 , NCEP02590D , NCEP02590T , NCEP025F90D , NCEP025F90T , NCEP025N12LL , IRFP260N , NCEP025N60 , NCEP025N60AG , NCEP025N60D , NCEP025N60G , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 .

History: WMB072N12LG2-S | SSF3616 | NCE65T900 | AFC3346W | CJ2321

 

 
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