NCEP026N10M Todos los transistores

 

NCEP026N10M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP026N10M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO-220
 

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NCEP026N10M Datasheet (PDF)

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NCEP026N10M

NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 4.1. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10M

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.2. Size:302K  ncepower
 ncep026n10ll.pdf pdf_icon

NCEP026N10M

NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 4.3. Size:1504K  ncepower
 ncep026n10t.pdf pdf_icon

NCEP026N10M

NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

MOSTRAR MÁS

Otros transistores... NCEP025N60G , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 , NCEP026N10D , NCEP026N10F , NCEP026N10LL , 2SK3878 , NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU , NCEP029N10 , NCEP029N10D , NCEP02T10 .

History: TK10A60W5 | CMI80N06 | SFG08S06DF | IVN5000ANE | FDMS0302S | RUH30150M | IRFPS30N60KPBF

 

 
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