NCEP026N10M Datasheet. Specs and Replacement

Type Designator: NCEP026N10M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-220

NCEP026N10M substitution

- MOSFET ⓘ Cross-Reference Search

 

NCEP026N10M datasheet

 ..1. Size:352K  ncepower
 ncep026n10m.pdf pdf_icon

NCEP026N10M

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ... See More ⇒

 4.1. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10M

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 4.2. Size:302K  ncepower
 ncep026n10ll.pdf pdf_icon

NCEP026N10M

NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat... See More ⇒

 4.3. Size:1504K  ncepower
 ncep026n10t.pdf pdf_icon

NCEP026N10M

NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒

SHOW MORE

Detailed specifications: NCEP025N60G, NCEP025N85LL, NCEP0260, NCEP0260D, NCEP026N10, NCEP026N10D, NCEP026N10F, NCEP026N10LL, 8205A, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10

Keywords - NCEP026N10M MOSFET specs

 NCEP026N10M cross reference

 NCEP026N10M equivalent finder

 NCEP026N10M pdf lookup

 NCEP026N10M substitution

 NCEP026N10M replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.