NCEP02T10LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NCEP02T10LL Datasheet (PDF)

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http://www.ncepower.comNCEP02T10LLNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =200V,I =100ADS Duniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

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http://www.ncepower.comNCEP02T10TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10T uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

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Pb Free Producthttp://www.ncepower.com NCEP02T10DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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http://www.ncepower.comNCEP02T10NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchin

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