NCEP02T10LL Datasheet and Replacement
Type Designator: NCEP02T10LL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 87 nC
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 425 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TOLL
NCEP02T10LL substitution
NCEP02T10LL Datasheet (PDF)
ncep02t10ll.pdf

http://www.ncepower.comNCEP02T10LLNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =200V,I =100ADS Duniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product
ncep02t10t.pdf

http://www.ncepower.comNCEP02T10TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10T uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
ncep02t10d.pdf

Pb Free Producthttp://www.ncepower.com NCEP02T10DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep02t10.pdf

http://www.ncepower.comNCEP02T10NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchin
Datasheet: NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU , NCEP029N10 , NCEP029N10D , NCEP02T10 , IRF1010E , NCEP02T10T , NCEP02T11D , NCEP02T11T , NCEP030N12 , NCEP030N12D , NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU .
History: FCPF850N80Z
Keywords - NCEP02T10LL MOSFET datasheet
NCEP02T10LL cross reference
NCEP02T10LL equivalent finder
NCEP02T10LL lookup
NCEP02T10LL substitution
NCEP02T10LL replacement
History: FCPF850N80Z



LIST
Last Update
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement | 2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor