All MOSFET. NCEP02T10LL Datasheet

 

NCEP02T10LL Datasheet and Replacement


   Type Designator: NCEP02T10LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TOLL
 

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NCEP02T10LL Datasheet (PDF)

 ..1. Size:790K  ncepower
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NCEP02T10LL

http://www.ncepower.comNCEP02T10LLNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =200V,I =100ADS Duniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

 5.1. Size:1131K  ncepower
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NCEP02T10LL

http://www.ncepower.comNCEP02T10TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10T uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

 5.2. Size:322K  ncepower
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NCEP02T10LL

Pb Free Producthttp://www.ncepower.com NCEP02T10DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.3. Size:750K  ncepower
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NCEP02T10LL

http://www.ncepower.comNCEP02T10NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchin

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Datasheet: NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU , NCEP029N10 , NCEP029N10D , NCEP02T10 , IRF9540N , NCEP02T10T , NCEP02T11D , NCEP02T11T , NCEP030N12 , NCEP030N12D , NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU .

History: SSM4565M | TK11A65W | 6N65KL-TND-R | JCS7N70B | AON7544 | TK11Q65W | PJU4NA65

Keywords - NCEP02T10LL MOSFET datasheet

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