NCEP030N12D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP030N12D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 340 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 215 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 1020 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO-263

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NCEP030N12D datasheet

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NCEP030N12D

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 ..2. Size:500K  ncepower
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NCEP030N12D

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

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NCEP030N12D

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

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NCEP030N12D

Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON

Otros transistores... NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12, IRFP260, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M