NCEP030N12D Datasheet. Specs and Replacement
Type Designator: NCEP030N12D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 340 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 215 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 1020 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-263
NCEP030N12D substitution
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NCEP030N12D datasheet
ncep030n12 ncep030n12d.pdf
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26... See More ⇒
ncep030n12d.pdf
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26... See More ⇒
ncep030n12.pdf
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26... See More ⇒
ncep030n60agu.pdf
Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON... See More ⇒
Detailed specifications: NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12, IRFP260, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M
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