NCEP030N12D
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP030N12D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 340
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 215
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 225
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 1020
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
TO-263
NCEP030N12D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP030N12D
Datasheet (PDF)
..1. Size:500K ncepower
ncep030n12 ncep030n12d.pdf 
NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
..2. Size:500K ncepower
ncep030n12d.pdf
NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
4.1. Size:500K ncepower
ncep030n12.pdf
NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
6.1. Size:931K ncepower
ncep030n60agu.pdf
Pb Free Producthttp://www.ncepower.com NCEP030N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP030N60AGU uses Super Trench II technology that V =60V,I =95ADS Dis uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5VDS(ON
6.2. Size:758K ncepower
ncep030n85gu.pdf
http://www.ncepower.com NCEP030N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP030N85GU uses Super Trench II technology that is V =85V,I =140ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R pro
6.3. Size:815K ncepower
ncep030n85ll.pdf
NCEP030N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =210ADS Dswitching performance. Both conduction and switching power R =2.65m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
6.4. Size:716K ncepower
ncep030n30gu.pdf
http://www.ncepower.com NCEP030N30GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4m (typical) @ V =4.5V
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