NCEP030N85GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP030N85GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 96 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00305 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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NCEP030N85GU Datasheet (PDF)

..1. Size:758K ncepower
ncep030n85gu.pdf

http://www.ncepower.com NCEP030N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP030N85GU uses Super Trench II technology that is V =85V,I =140ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R pro

4.1. Size:815K ncepower
ncep030n85ll.pdf

NCEP030N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =210ADS Dswitching performance. Both conduction and switching power R =2.65m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

6.1. Size:931K ncepower
ncep030n60agu.pdf

Pb Free Producthttp://www.ncepower.com NCEP030N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP030N60AGU uses Super Trench II technology that V =60V,I =95ADS Dis uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5VDS(ON

6.2. Size:500K ncepower
ncep030n12.pdf

NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

6.3. Size:500K ncepower
ncep030n12 ncep030n12d.pdf

6.4. Size:500K ncepower
ncep030n12d.pdf

6.5. Size:716K ncepower
ncep030n30gu.pdf

http://www.ncepower.com NCEP030N30GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4m (typical) @ V =4.5V

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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